InGaN-based green micro-LED efficiency enhancement by hydrogen passivation of the p-GaN sidewall
نویسندگان
چکیده
Abstract We investigated the effect of sidewall passivation by hydrogen plasma on InGaN green micro-LED performance. Hydrogen deactivates surface region p-GaN around perimeter device mesa. Thus, hole injection is suppressed in this region, where etching-caused material degradation results leakage current, decreasing efficiency. have confirmed LED square pixels with sizes 20 and 100 ? m. For smaller LEDs, reverse current has reduced more than tenfold, external quantum efficiency LEDs was enhanced 1.4-times due to suppression non-radiative recombination.
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ژورنال
عنوان ژورنال: Applied Physics Express
سال: 2022
ISSN: ['1882-0786', '1882-0778']
DOI: https://doi.org/10.35848/1882-0786/ac7fdc